CMOS sensors have thousands. This means that CMOS cameras can read out incredibly fast, even 100X faster than a comparable CCD. For long-exposure applications that is not so important, but it is especially important for video cameras.

In general, CIS allows the construction of smaller sizes as well as lower power consumption, while CCD technology allows a higher depth of field, higher speed and signal noise ratio and better colour accuracy – so higher quality and productivity.

CCD Still Has Advantages When you do find one, it’s usually at the very high end of the premium point-and-shoot market–Canon’s PowerShot G12, Nikon’s Coolpix P7100, Olympus’s XZ-1, and Panasonic’s Lumix LX5, for example–where the potential user is primarily interested in still-image quality.

In cameras, CCD enables them to take in visual information and convert it into an image or video. They are, in other words, digital cameras. This allows for the use of cameras in access control systems because images no longer need to be captured on film to be visible.

One difference between CCD and CMOS sensors is the way they capture each frame. A CCD uses what’s called a “Global Shutter” while CMOS sensors use a “Rolling Shutter”. Global Shutter means that the entire frame is captured at the exact same time. A CMOS sensor captures light though capturing each pixel one-by-one.

For enthusiasts and beginners, the usual choice is the APS-C format or crop-sensor DSLR camera. However, some prefer to use mirrorless cameras or MILCs, which are the smaller, lighter versions of DSLRs. Lastly, there are the 1-inch sensor cameras, which are better known as point-and-shoot or compact digital cameras.

They’re made through a special manufacturing process that allows the conversion to take place in the chip without distortion. This creates high quality sensors that produce excellent images. But, because they require special manufacturing, they are more expensive than their newer CMOS counter parts.

CMOS allows for better power dissipation and more transistors. It appears that CMOS and MOS(NMOS) are very similar technologies while CCD is something completely different. Shortly put, there is no difference. Generally CMOS is a subset of MOS, but in sensors’ context it represent the same thing.

An advantage of CMOS over NMOS logic is that both low-to-high and high-to-low output transitions are fast since the (PMOS) pull-up transistors have low resistance when switched on, unlike the load resistors in NMOS logic. In addition, the output signal swings the full voltage between the low and high rails.

As the CMOS consists of the FET’s and the TTL circuits are made up of BJT, CMOS chips are much faster and efficient. There is a much higher density of the logic functions in a single chip in CMOS as compared to the TTL. CMOS chips could have the TTL logics and could be used for the replacement of the TTL IC.

Nmos is preferred over pmos because n-channel mosfets have a lower Rdson*cost metric. Because the needed die is bigger, die per wafer will be lower and the die cost (wafer cost/die per wafer) for a pmos device of the same Rdson will be higher. There are applications where a p-channel device makes economical sense.

NMOS circuits offer a speed advantage over PMOS due to smaller junction areas. Since the operating speed of an MOS IC is largely limited by internal RC time constants and capacitance of diode is directly proportional to its size, an n-channel junction can have smaller capacitance. This, in turn, improves its speed.

This is the reason it is connected to Ground. Because the voltage between the Ground and the Source in the NMOS transistor has to be positive, so the logical choice is to connect the Source to the ground. In PMOS, the voltage between the Gate and the Source has to be negative, so you connect the Source to VDD.

Pull down means bring output to Zero from One too. If input is One for an inverter in CMOS, N transistor will be drive the output to Zero as pull down. If PMOS is used to pull down with source as VSS output will be at By and similarly, NMOS gives VDD minus one threshold as output if source connected to VDD.

PMOS pass transistor passes Strong ‘1’ but weak ‘0’  An NMOS pass-transistor can pull down to the positive supply rail, but it can only pull-down to a threshold voltage above the negative rail.  => It can output a strong zero, but a weak one.

To prevent latch-up in CMOS, the body-source and body-drain diodes should not be forward biased; i.e, body terminal should be at same or lesser voltage than source terminal (for an NMOS; for a PMOS, it should be at higher voltage than source). This is the reason why body is connected to ground for all NMOS.

If VDD is connected to NMOS, it outputs weak logic 1 and when VSS is connected to PMOS, it passes weak logic 0 due to threshold drop. So, it acts like a buffer with degraded outputs. When these are connected in series, the output further degrades.

When pmos and nmos are interchanged in CMOS inverter it gives a buffer with weak output states. If again the PMOS transistor be from Vcc down so when its input goes low it passes and pulls the output high opposite to the NMOS one be at ground so when input goes high then output goes low.

If it is LOW, the NMOS transistor is turned “OFF”, and the output terminal is disconnected from the input. Thus, the control voltage, VC at the gate determines whether the transistor is an “open” or “closed” as a switch.

What is the condition for non conducting mode? Explanation: In enhancement mode the device is in non conducting mode, and its condition is Vds = Vgs = Vs = 0. Explanation: nMOS transistors are acceptor doped. Acceptor is a dopant which when added forms p-type region.

Explanation: One of the disadvantages of MOS technology is it has limited load driving capabilities. 2. What is the disadvantage of the MOS device? Explanation: MOS devices have limited current sourcing and current sinking abilities.

The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of insulated-gate field-effect transistor that is fabricated by the controlled oxidation of a semiconductor, typically silicon.